High-bandwidth memory has been around for about a decade, and throughout its its continued development it has steadily increased in speed, starting at a data transfer rate from 1 GT/s (the original HBM) and reaching upwards of 9 GT/s with the forthcoming HBM3E. This has made for an impressive jump in bandwidth in less than 10 years, making HBM an important cornerstone for whole new classes of HPC accelerators that have since hit the market. But it's also a pace that's getting harder to sustain as memory transfer rates increase, especially as the underlying physics of DRAM cells have not changed. As a result, for HBM4 the major memory manufacturers behind the spec are planning on making a more substantial change to the high-bandwidth...

Micron Publishes Updated DRAM Roadmap: 32 Gb DDR5 DRAMs, GDDR7, HBMNext

In addition to unveiling its first HBM3 memory products yesterday, Micron also published a fresh DRAM roadmap for its AI customers for the coming years. Being one of the...

4 by Anton Shilov on 7/27/2023

Micron Announces 20-Year Plan To Build $100 Billion U.S. Fab Complex

Now that the U.S. government has finally settled the matter of whether it would be providing subsidies to entice chip fabs to setup shop within the U.S., those fabs...

48 by Anton Shilov on 10/10/2022

Log in

Don't have an account? Sign up now