3GAP

Samsung Foundry is set to detail its second generation 3 nm-class fabrication technology as well as its performance-enhanced 4 nm-class manufacturing process at the upcoming upcoming 2023 Symposium on VLSI Technology and Circuits in Kyoto, Japan. Both technologies are important for the contract maker of chips as SF3 (3GAP) promises to offer tangible improvements for mobile and SoCs, whereas SF4X (N4HPC) is designed specifically for the most demanding high-performance computing (HPC) applications. 2nd Generation 3 nm Node with GAA Transistors Samsung's upcoming SF3 (3GAP) process technology is an enhanced version of the company's SF3E (3GAE) fabrication process, and relies on its second-generation gate-all-around transistors – which the company calls Multi-Bridge-Channel field-effect transistors (MBCFETs). The node promises additional process optimizations, though the foundry prefers not to compare...